SSD50P03-09D 61a, -30v, r ds(on) 9m p-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature to-252 surface mount package saves board space. ? high power and current handling capability. ? extended v gs range (25) for battery pack applications. package information package mpq leadersize to-252 2.5k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v continuous drain current 1 i d @t a =25 61 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s -30 a total power dissipation 1 p d @t a =25 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resist ance junction-case r jc 3.0 c / w notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. a c d n o p g e f h k j m b ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 to-252(d-pack) ? ? gate ? ? source ? ? drain
SSD50P03-09D 61a, -30v, r ds(on) 9m p-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v ds = v gs, i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs = 0v - - -5 v ds = -24v, v gs =0v, t j =55c on-state drain current 1 i d(on) -41 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 9 m ? v gs = -10v, i d = -61a - - 13 v gs = -4.5v, i d = -51a forward transconductance 1 g fs - 31 - s v ds = -15v, i d = -61a diode forward voltage v sd - -0.7 - v i s = -41 a, v gs = 0 v dynamic 2 total gate charge q g - 37 - nc v ds = -15 v v gs = -4.5 v i d = -61 a gate-source charge q gs - 10 - gate-drain charge q gd - 14.5 - switching turn-on delay time t d(on) - 15 - ns v dd = -15 v i d = -41 a v gen = -10 v r l = 15 ? r g = 6 ? rise time t r - 12 - turn-off delay time t d(off) - 62 - fall time t f - 46 - notes 1 pulse test pulse width Q 300 s, duty cycle Q 2 . 2 guaranteed by design, not s ubject to production testing.
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